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Abstract
Introduction
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Ingénierie

Elektrisk-kontroll av elektroniske stater i WS2 Nanodevices av elektrolytt Gating

Published: April 12, 2018
doi:
10.3791/56862
, , , , , , ,
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,The University of Tokyo, 2Materials Sciences Division,Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research,Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)

Summary

Her presenterer vi en protokoll for å kontrollere hvor transportør i faste stoffer ved hjelp av elektrolytt.

Abstract

En metode for carrier nummer kontroll av elektrolytt gating er demonstrert. Vi har fått WS2 tynn flak med atomically flate via plasteret metoden eller personlige WS2 nanorør av spre suspensjon av WS2 nanorør. Valgte prøvene har fabrikkert i enheter ved bruk av elektron strålen litografi og elektrolytt er lagt på enhetene. Vi har preget elektronisk egenskapene til enhetene under bruke gate spenning. I regionen liten gate spenning akkumuleres ioner i elektrolytten på overflaten av prøvene som fører til stor elektrisk potensielle drop og resulterende elektrostatisk transportør doping i grensesnittet. Ambipolar overføring kurven er observert i denne elektrostatisk doping regionen. Når gate spenning videre økes, møtte vi en drastisk økning av kilde-avløpet dagens som innebærer at ioner er under Sommer i lag WS2 og elektrokjemiske carrier doping er realisert. I slike elektrokjemiske doping regionen, har superleder blitt observert. Fokusert teknikken gir en kraftig strategi for å oppnå elektrisk-arkivert-indusert quantum fase overgangen.

Introduction

Kontroll av forvalgskoden er den viktig teknikken for å realisere quantum fase overgangen i tørrstoff1. I konvensjonell feltet effekt transistor (FET) oppnås det ved bruk av solid gate1,2. I slike en enhet er elektrisk potensielle gradering uniform gjennom dielektriske materialer slik at indusert carrier nummer på grensesnittet er begrenset, vist i figur 1a.

På den annen side, kan vi oppnå høyere carrier tetthet grensesnittet eller bulk ved å erstatte solid dielektriske materialer med ionic gels/væsker eller polymer elektrolytter3,4,5,6, 7,8,9,10,11 (figur 1b). I elektrostatisk doping ved bruk av ionisk væsken, elektrisk dobbeltlag transistor (EDLT) strukturen er dannet på grensesnittet mellom ioniske væske og utvalg, genererer sterke elektromagnetiske felt (> 0,5 V/Å) selv ved lave bias spenning. Resulterende høy carrier tetthet (> 1014 cm-2) indusert på grensesnittet10,12,13 årsaken romanen elektroniske egenskaper eller quantum fase overgangen som elektrisk-feltet-indusert ferromagnetism14, Coulomb blokaden15, ambipolar transport16,17,18,19,20, 21 , 22 , 23 , 24 , 25 , 26 , 27, dannelsen av p-n junction og resulterende electroluminance28,29,30, store modulering av termoelektrisk krefter31,32, lade tetthet wave og Mott overganger33,34,35, og elektrisk-feltet-indusert isolator metall overgang36,37 inkludert elektrisk-feltet-indusert superleder9 ,10,11,38,39,40,41,42,43,44 ,,45,,46,,47,,48,,49.

I den elektrolytt gating (figur 1 c), ioner bare er akkumuleres ikke i grensesnittet til EDLT-skjemaet, men kan være også under Sommer i lag av todimensjonal materialer via termisk diffusjon uten skadelige prøve under bruke stor gate spenning, fører til den elektrokjemiske doping8,9,11,34,38,50,51,52,53 . Dermed kan vi drastisk endre hvor transportøren sammenlignet med konvensjonelle feltet effekt transistor med solid porten. Spesielt er den elektrisk-felt-indusert superleder9,11,34,38,50 realisert ved bruk av elektrolytt gating i regionen av store nummeret der vi ikke tilgang av konvensjonelle solid gating metoden.

I denne artikkelen vi introdusere denne unike teknikk carrier nummer kontroll i faste stoffer og oversikt transistor operasjonen og elektrisk-feltet-indusert superleder i semiconducting WS2 eksempler som WS2 flak og WS2 nanorør54,55,56,57.

Protocol

1. spredning av WS 2 nanorør (NTs) på underlaget Spre WS2 NT pulver i isopropyl alkohol (IPA, konsentrasjon mer enn 99.8%) med riktige utvannet forholdet (ca 0,1 mg/mL) av sonication for 20 min.Merk: Den langsiktige sonication hjelper å gjøre WS2 NTs jevnt suspendert i IPA væske og separat velformet personlige WS2 NTs amorfe WS2 eller andre juks, samt å fjerne søppel samler på WS2 NTs overflaten. Figur 2b…

Representative Results

Den typiske transistor driften av en individuell WS2 NT og en WS2 flake enheter vises i figur 3a og 3b, henholdsvis hvor kilden renne gjeldende (jegDS) som en funksjon av gate spenning (V G) pent opererer i en ambipolar modus, viser en bemerkelsesverdig kontrast til Unipolare gate svaret av den konvensjonelle solid gated FET i forrige publikasjonen58. Vurde…

Discussion

Både WS2 NTs og flak, har vi vellykket kontrollert elektrisk egenskapene av elektrostatisk eller electro kjemiske bærer doping.

I elektrostatisk doping regionen, har ambipolar transistor operasjonen blitt observert. Slike ambipolar overføring kurve med et høyt/på forholdet (> 102) observert i lav bias spenning angir effektiv transportøren doping på grensesnittet av elektrolytt gating teknikk for tuning Fermi-nivå av disse systemene.

Sel…

Divulgations

The authors have nothing to disclose.

Acknowledgements

Vi anerkjenner følgende økonomisk støtte; Grant-in-Aid for spesielt forfremmet forskning (nr. 25000003) fra JSP, Grant-in-Aid for forskning aktivitet oppstart (No.15H06133) og utfordrende forskning (utforskende) (nr. JP17K18748) fra MEXT i Japan.

Materials

Sonication machine SND Co., Ltd. US-2 http://www.senjyou.jp/
Spin-coater machine ACTIVE Co.,Ltd. ACT-300AII http://www.acti-ve.co.jp/spincoater/standard/act300a2.html
Hot-plate TAIYO HP131224 http://www.taiyo-kabu.co.jp/products/detail.php?product_id=431
Optical Microscopy OLYMPUS BX51 https://www.olympus-ims.com/ja/microscope/bx51p/
Electron Beam Lithography machine ELIONIX INC. ELS-7500I https://www.elionix.co.jp/index.html
Scribing machine TOKYO SEIMITSU CO., LTD. A-WS-100A http://www.accretech.jp/english/product/semicon/wms/aws100s.html
Wire-bonding machine WEST·BOND  7476D-79 https://www.hisol.jp/products/bonder/wire/mgb/b.html
Physical Properties Measurement System Quantum Design PPMS http://www.qdusa.com/products/ppms.html
Lock-in amplifier Stanford Research Systems SRS830 http://www.thinksrs.com/products/SR810830.htm
Source meter Textronix KEITHLEY 2612A http://www.tek.com/keithley-source-measure-units/smu-2600b-series-sourcemeter
KClO4 Sigma-Aldrich 241830 http://www.sigmaaldrich.com/catalog/product/sigald/241830?lang=ja&region=JP
PEG WAKO 168-09075 http://www.siyaku.com/uh/Shs.do?dspCode=W01W0116-0907
IPA WAKO 169-28121 http://www.siyaku.com/uh/Shs.do?dspWkfcode=169-28121
MIBK WAKO 131-05645 http://www.siyaku.com/uh/Shs.do?dspCode=W01W0113-0564
PMMA MicroChem PMMA http://microchem.com/Prod-PMMA.htm
Acetone WAKO 012-26821 http://www.siyaku.com/uh/Shs.do?dspWkfcode=012-26821
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Tags

Keywords: Electric-field ControlElectronic StatesWS2 NanodevicesElectrolyte GatingQuantum Phase TransitionsElectric-field-induced SuperconductivityTungsten Disulfide NanotubesTungsten Disulfide FlakesPMMA CoatingSpin-coating
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Qin, F., Ideue, T., Shi, W., Zhang, Y., Suzuki, R., Yoshida, M., Saito, Y., Iwasa, Y. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating. J. Vis. Exp. (134), e56862, doi:10.3791/56862 (2018).
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