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Chapitres
- 00:05Titre
- 02:03GaP/Si Sample Loading
- 02:51Set up of Appropriate Working Conditions
- 03:46Visualization of the Sample’s Electron Channeling Patterns
- 04:35Imaging of Defects and Features
- 06:13Results: Imaging Clearly Shows the Misfit Networks in GaP/Si Samples
- 07:14Conclusion
The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.
