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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Chapitres
- 00:05Titre
- 00:53RF-assisted Plasma-assisted Molecular Beam Epitaxy (PAMBE) System and Sample Preparation
- 04:36N-polar InAIN-barrier High-electron-mobility Transistor (HEMT) Growth
- 08:03Results: N-polar InAIN-barriers High-electron-mobility Transistors Grown with PAMBE
- 09:30Conclusion
Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.
