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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构
 
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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构

Article DOI: 10.3791/56494-v • 08:50 min • November 28th, 2017
November 28th, 2017 •
1,2, 2,3, 1,2, 1,2
1Graduate Institute of Electronics Engineering, National Taiwan University, 2Research Center for Applied Sciences, Academia Sinica, 3Graduate Institute of Photonics and Optoelectronics, National Taiwan University

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通过 pre-deposited 过渡金属的硫化, 可以制备大面积和垂直2D 晶体杂化结构。本报告还演示了薄膜传输和器件制作程序。

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工程 问题 129 垂直2D 晶体杂化结构 过渡金属 dichalcogenides 硫化 射频溅射 薄膜传输 晶体管
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