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모든 전자 나노초 해결 주사 터널링 현미경: 촉진 단일 불순물 충전 역학 조사
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Ingénierie
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Journal JoVE Ingénierie
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
DOI:

11:33 min

January 19, 2018

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Chapitres

  • 00:05Titre
  • 00:52Initial Setup of Microscope and Experiments
  • 02:05Preparation of the H-Si(100)-(2×1) Reconstruction
  • 04:20Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction
  • 06:32Experiment 1: Time-resolved Scanning Tunneling Spectroscopy
  • 07:55Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics
  • 08:47Experiment 3: Time-resolved STM Measurements of Excitation Dynamics
  • 09:27Results: Investigation of Single Dopant Change Dynamics
  • 10:43Conclusion

Summary

Traduction automatique

실리콘에서 불순물 원자의 나노초 해결 충전 역학 주사 터널링 현미경으로 관찰 하는 모든 전자 방법 보여 줍니다.

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