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Chapitres
- 00:05Titre
- 00:26Si Doping and Isolation
- 02:12Sacrificial Oxide Layer Deposition
- 02:59Deposition of the First Layer of Polyimide and Performing the First Metallization
- 04:43Deposition of the Second Layer of Polyimide and Performing the Second Metallization
- 05:12Encapsulating the Sample with Polyimide and Opening via Holes and Mesh Structure
- 05:56Etching the Sacrificial Layer and Transferring the Sample to a Flexible Substrate
- 07:39Results: Current-Voltage Characteristics for the Phototransistor Array in the Curved State
- 08:45Conclusion
We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.
