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Carrier levetid målinger i halvledere gennem metoden mikroovn Photoconductivity henfald
Journal JoVE
Ingénierie
This content is Free Access.
Journal JoVE Ingénierie
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
DOI:

07:38 min

April 18, 2019

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Chapitres

  • 00:04Titre
  • 00:49Preparation of the Sample and Aqueous Solutions
  • 01:44Preparation of the Measuring Equipment
  • 03:36Measurement and Data Processing
  • 05:47Results: Normalized and Calculated μ-PCD Decay Curves for the n-type 4H-SIC Sample in Air and Aqueous Solutions
  • 06:29Conclusion

Summary

Traduction automatique

Som en af de vigtige fysiske parametre i halvledere måles carrier levetid heri via en protokol, der anvender metoden mikroovn photoconductivity henfald.

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