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Contact ohmique fabrication utilisant une technique Focused Ion Beam-et caractérisation électrique pour la couche semi-conducteurs Nanostructures
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Capitoli
- 00:05Titolo
- 00:57Exfoliation of MoSe2 Layer Nanocrystals
- 02:01Dispersion of the Layer Nanocrystals onto the Device Template
- 02:42Electrode Fabrication by Focused-ion Beam
- 06:14Results: Characteristics of Ohmic Contacts
- 07:33Conclusion
We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.
