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光增强氢氟酸钝化：一个敏感的技术检测散装硅缺陷
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JoVE Journal Ingegneria
Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
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光增强氢氟酸钝化：一个敏感的技术检测散装硅缺陷

DOI:
10.3791/53614-v

•

09:15 min

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January 04, 2016

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1Research School of Engineering,Australian National University

Capitoli

  • 00:05Titolo
  • 01:02Cleaning and Etching the Silicon Wafers
  • 04:08Silicon Wafer Passivation and Photoconductive (PC) Measurement
  • 07:08Results: Silicon Wafer Photoconductive Measurement after Surface Passivation
  • 08:10Conclusion

Summary

Traduzione automatica

Traduzione automatica

一个RT液体表面钝化技术研究体硅缺陷的重组活性描述。对于该技术是成功的，三个关键的步骤是必需的：（ⅰ）化学清洗和硅的蚀刻，硅的（ⅱ）浸没在15％的氢氟酸和（iii）照明1分钟。

Tags

Silicon WafersBulk DefectsSurface PassivationHydrofluoric AcidChemical CleaningSC1SC2Recombination ActivityHigh-purity SiliconSolar CellsLifetimeDI WaterQuartz CradleFume HoodTemperature Control

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