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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Capitoli
- 00:05Titolo
- 00:43Grow Single Crystals of TCDAP Using a Physical Vapor Transfer (PVT) System
- 01:43Device Fabrication
- 04:09Measure the Performance of the Device and Bending Experiments
- 05:32Results: Measuring Properties of Bent Organic Electronic Devices
- 06:38Conclusion
This manuscript describes the bending process of an organic single crystal-based field-effect transistor to maintain a functioning device for electronic property measurement. The results suggest that bending causes changes in the molecular spacing in the crystal and thus in the charge hopping rate, which is important in flexible electronics.
