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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构
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JoVE Journal Ingegneria
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构

DOI:
10.3791/56494-v

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08:50 min

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November 28, 2017

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, , ,
1Graduate Institute of Electronics Engineering,National Taiwan University, 2Research Center for Applied Sciences,Academia Sinica, 3Graduate Institute of Photonics and Optoelectronics,National Taiwan University

Capitoli

  • 00:05Titolo
  • 00:47WS2/MoS2Vertical Heterostructure Growth
  • 03:49Transition Metal Dichalcogenide (TMD) Thin Film Transfer
  • 06:21Results: Growth Mechanisms and Transistor Performance
  • 08:11Conclusion

Summary

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通过 pre-deposited 过渡金属的硫化, 可以制备大面积和垂直2D 晶体杂化结构。本报告还演示了薄膜传输和器件制作程序。

Tags

2D Crystal HeterostructuresVertical 2D MaterialsSulfurizationTransition Metal FilmsDevice FabricationRF SputteringSapphire SubstrateMolybdenum TargetSulfur PowderTube FurnaceArgon GasMolybdenum DisulfideTungsten Target

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