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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,The University of Tokyo, 2Materials Sciences Division,Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research,Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)
Capitoli
- 00:04Titolo
- 00:38Dispersion of WS2 Nanotubes (NTs) on a Si/SiO2 Substrate
- 01:35Application of WS2 Flakes to a Si/SiO2 Substrate with the Tape Method
- 02:28Device Fabrication by Electron Beam Lithography
- 05:59Electrode Deposition
- 07:17Device Completion and Transport Measurements
- 08:31Results: Transistor Operations of WS2 Nanotube and Flake Devices
- 09:56Conclusion
