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在 Cu(In、Ga)Se₂薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触

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Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in Cu(In,Ga)Se₂ Thin-film Solar Cells

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在 Cu(In、Ga)Se₂薄膜太阳能电池中制造银纳米线电极与 CdS 缓冲层之间的强健纳米级接触

DOI:

10.3791/59909-v

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09:01 min

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July 19, 2019

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Sangyeob Lee², Kyung Soo Cho, Soomin Song, Kihwan Kim⁴, Young-Joo Eo⁴, Jae Ho Yun⁴, Jihye Gwak⁴, Choong-Heui Chung²

¹Department of Materials Science and Engineering,Hanbat National University, ²Department of Materials and Manufacturing Engineering,Hanbat National University, ³Photovoltaics Laboratory,Korea Institute of Energy Research, ⁴Renewable Energy Engineering,University of Science and Technology, Daejeon

Capitoli

00:04Titolo
00:46Preparation of Mo-coated Glass by DC Magnetron Sputtering
01:49CIGS Absorber Layer Deposition by Means of a Three-stage Co-evaporation
03:51Growth of the CdS Buffer Layer on the CIGS Absorber Layer Using a Chemical Bath Deposition (CBD) Method
05:20Fabrication of the AgNW TCE Network
06:11Deposition of the 2^nd CdS Layer and Characterization Techniques
06:51Results: Characterization of Cu(In,Ga)Se₂ Thin-film Solar Cells
08:23Conclusion

Summary

Traduzione automatica

在本协议中,我们描述了在CIGS薄膜太阳能电池中制造银纳米线网络和CdS缓冲层之间强健纳米级接触的详细实验过程。

Tags

Silver Nanowire CdS Buffer Layer Cu(In Ga)Se2 Thin-film Solar Cells Electrical Contact Solution-based Process Magnetron Sputtering Co-evaporation CIGS Film

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