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单氮化镓纳米线设备分析接触界面

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Analysis of Contact Interfaces for Single GaN Nanowire Devices

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单氮化镓纳米线设备分析接触界面

DOI:

10.3791/50738-v

•

11:13 min

•

November 15, 2013

•

Andrew M. Herrero, Paul T. Blanchard, Kris A. Bertness

¹Quantum Electronics and Photonics Division,National Institute of Standards and Technology

Chapters

00:05Title
01:32Wafer Preparation
03:14Photolithography of Contact Pattern
04:55Electron-beam Evaporation of Contact Metals
06:29Contact Metal Lift-off and Annealing
07:38Ni/Au Film Removal
09:04Results: Annealed Ni/Au Films Removed with Carbon Tape
10:45Conclusion

Summary

자동 번역

一种技术的开发，可以消除镍/金金属接触片从基底，以允许接触/基板和氮化镓单纳米线器件的接触/净重接口的检验和鉴定。

Tags

Keywords: GaN Nanowire Contact Interface Void Formation Contact Metal Removal Ni/Au Contacts SiO2 Substrate Contact Adhesion Contact Morphology Residual Contamination

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