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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

DOI:
10.3791/51179-v

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10:32 min

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January 09, 2014

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, , , ,
1Department of Physics,The State University of New York at Buffalo, 2Joint Quantum Institute,University of Maryland, 3The National Institute of Standards and Technology, 4Cryogenics and Fluids Branch,NASA Goddard Space Flight Center, 5HRL Laboratories

Chapters

  • 00:05Title
  • 01:54Bonding Preparation
  • 04:38Wafer Bonding
  • 08:04Results: Analysis of Bonded Wafers
  • 09:59Conclusion

Summary

자동 번역

자동 번역

A method for permanently bonding two silicon wafers so as to realize a uniform enclosure is described. This includes wafer preparation, cleaning, RT bonding, and annealing processes. The resulting bonded wafers (cells) have uniformity of enclosure ~1%1,2. The resulting geometry allows for measurements of confined liquids and gasses.

Tags

Silicon Direct Wafer BondingNanoscale CavitiesConfined 4HeLambda TransitionUniform ConfinementThermal OxideLithographic PatterningRCA CleaningHigh-temperature AnnealingThermal And Hydrodynamic Properties

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