Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Journal

공학

JoVE 신문
공학

This content is Free Access.

JoVE 신문 공학

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

DOI:

10.3791/52852-v

•

14:58 min

•

June 03, 2015

•

Alessandro Rossi, Tuomo Tanttu, Fay E. Hudson, Yuxin Sun, Mikko Möttönen, Andrew S. Dzurak

¹School of Electrical Engineering & Telecommunications,University of New South Wales, ²QCD Labs, COMP Centre of Excellence, Department of Applied Physics,Aalto University

Chapters

00:05Title
03:11Creation of the Field Oxide Layer, Ohmic Contacts, and the Gate Oxide
07:10Gate Patterning
09:20Device Integrity Tests
10:57Results: Device Integrity Test Results and Millikelvin Measurements
12:13Conclusion

Summary

자동 번역

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

•

•

•

Chapters

Summary

자동 번역

Tags

Article

Embed

플레이리스트에 추가

Usage Statistics

Related Videos

Compact Quantum Dots for Single-molecule Imaging

Gradient Echo Quantum Memory in Warm Atomic Vapor

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Scanning-probe Single-electron Capacitance Spectroscopy

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects

Read Article