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Totalmente electrónico resuelto nanosegundo túnel microscopía: Facilitar la investigación de Dopant solo carga dinámica
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JoVE 신문 공학
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
DOI:

11:33 min

January 19, 2018

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Chapters

  • 00:05Title
  • 00:52Initial Setup of Microscope and Experiments
  • 02:05Preparation of the H-Si(100)-(2×1) Reconstruction
  • 04:20Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction
  • 06:32Experiment 1: Time-resolved Scanning Tunneling Spectroscopy
  • 07:55Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics
  • 08:47Experiment 3: Time-resolved STM Measurements of Excitation Dynamics
  • 09:27Results: Investigation of Single Dopant Change Dynamics
  • 10:43Conclusion

Summary

자동 번역

Demostrar un método totalmente electrónico para observar la dinámica de carga resuelto nanosegundo de los átomos del dopant en silicio con un microscopio de efecto túnel.

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