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電解質ゲートによって WS2ナノデバイスにおける電子状態の電界制御
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공학
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JoVE 신문 공학
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
DOI:

10:36 min

April 12, 2018

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Chapters

  • 00:04Title
  • 00:38Dispersion of WS2 Nanotubes (NTs) on a Si/SiO2 Substrate
  • 01:35Application of WS2 Flakes to a Si/SiO2 Substrate with the Tape Method
  • 02:28Device Fabrication by Electron Beam Lithography
  • 05:59Electrode Deposition
  • 07:17Device Completion and Transport Measurements
  • 08:31Results: Transistor Operations of WS2 Nanotube and Flake Devices
  • 09:56Conclusion

Summary

자동 번역

ここでは、電解質を用いた固体キャリア数を制御するためのプロトコルを提案する.

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