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用电解质浇注法对 WS2纳米器件电子态的电场控制

Published: April 12, 2018
doi:
10.3791/56862
, , , , , , ,
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,The University of Tokyo, 2Materials Sciences Division,Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research,Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)

Summary

在这里, 我们提出了一个协议, 以控制在固体中的载波数使用电解质。

Abstract

证明了采用电解液浇注的载波数控制方法。通过使用透明胶带法或单个 WS2纳米管, 分散了 ws2纳米管的悬浮, 得到了 ws2薄片的原子平坦表面。所选样品通过电子束光刻和电解液放在设备上制成器件。我们在应用栅极电压的情况下, 对器件的电子特性进行了表征。在小栅极电压区, 电解液中的离子在样品表面积聚, 导致大电位下降, 并在界面上产生静电载流子掺杂。双极性转移曲线在这个静电掺杂区被观察到。当栅极电压进一步增加时 , 我们又遇到了源漏电流的急剧增加 , 这意味着离子入 WS2层 , 实现了电化学载体掺杂。在这种电化学掺杂区, 超导已被观察到。聚焦技术为实现电磁场诱导的量子相变提供了强有力的策略。

Introduction

载波数控制是实现固体中量子相变的关键技术1。在传统的场效应晶体管 (FET), 它是通过使用实心闸门1,2实现的。在这种装置中, 电势梯度在介质材料中是均匀的, 因此接口上的诱导载波数是有限的, 如图 1a所示。

另一方面, 通过用离子凝胶/液体或聚合物电解质代替固体介质材料, 我们可以在界面或体积上达到较高的载流子密度3,4,5,6, 7,8,9,10,11 (图 1b)。在离子液体的静电掺杂中, 电双层晶体管 (EDLT) 结构形成于离子液体与样品之间的界面上, 即使在低偏压下也产生强电场 (> 0.5 V/Å)。由此导致的高载波密度 (> 1014 cm-2) 在接口10,12,13引起新的电子属性或量子相变, 如电场 诱导的铁磁性14, 库仑封锁15, 双极性传输 16, 17, 18, 19, 20,21,22,23,24,25,26,27, 形成 p-n 结和结果 electroluminance28,29,30, 热电功率31,32, 电荷密度波和莫特转换33,34,35, 电场感应绝缘子-金属过渡36,37包括电场诱发超导性9 ,10,11,38,39, 40,41,42,43,44 ,45,46,47,48,49。

在电解液浇口 (图 1c) 中, 离子不仅在界面上积聚形成 EDLT, 而且在应用大栅极电压的情况下, 也可以通过热扩散将二维材料插入层中, 而不损坏试样,导致电化学掺杂8,9,11,34,38,50,51,52,53.因此, 我们可以大大改变载波数与传统的场效应晶体管使用实心门。特别是电场诱发的超导性9,11,34,38,50是在大型载波区域使用电解质浇口实现的。我们无法通过传统的固体浇口方法进入的数字。

本文介绍了这种在固体中的载波数控制的独特技术, 概述了半导体 WS2示例中的晶体管操作和电场感应超导性, 如 WS2片和 ws2纳米管54,55,56,57。

Protocol

1. 在基板上分散 WS 2纳米管 (蚂蚁) 将 WS2 NT 粉末分散为异丙醇 (IPA, 浓度超过 99.8%), 适当稀释率 (约0.1 毫克/毫升) 的超声波为20分钟。注意: 长时间的超声波有助于使 ws2在 IPA 液体中一致挂起, 并从非晶 WS2或其他的垃圾桶中分离出格式良好的单个 ws2 , 以及删除 ws2上的内存累积表面。图 2b显示 WS2的最终暂停。?…

Representative Results

单个 ws2 NT 和 ws2片设备的典型晶体管操作分别显示在图 3a和3b中, 其中源漏电流 (IDS) 作为栅极电压的函数 (V G) 在双极性模式下运行良好, 在以前的出版物58中, 与传统的实心门控场效应的单极栅响应显示出显著的对比.考虑到双极性行为是可逆的和可重复的, 这些晶体管操作可…

Discussion

在 WS2粒子和薄片中, 我们通过静电或电化学载体掺杂成功地控制了电性能。

在静电掺杂区, 双极性晶体管的操作被观察到。在低偏压下观察到高开/关比 (> 102) 的这种双极性传输曲线, 表明在电解质浇注技术的接口上有效的载流子掺杂, 用于调整这些系统的费米水平。

与传统的固体浇注方法相比, 该方法对小栅极偏置中大容量载波数的调整?…

Declarações

The authors have nothing to disclose.

Acknowledgements

我们承认以下财政支持;资助为特别促进的研究 (25000003) 从 jsp, 资助为研究活动启动 (不 15H06133) 和挑战性的研究 (探索) (不。JP17K18748) 来自日本下个。

Materials

Sonication machine SND Co., Ltd. US-2 http://www.senjyou.jp/
Spin-coater machine ACTIVE Co.,Ltd. ACT-300AII http://www.acti-ve.co.jp/spincoater/standard/act300a2.html
Hot-plate TAIYO HP131224 http://www.taiyo-kabu.co.jp/products/detail.php?product_id=431
Optical Microscopy OLYMPUS BX51 https://www.olympus-ims.com/ja/microscope/bx51p/
Electron Beam Lithography machine ELIONIX INC. ELS-7500I https://www.elionix.co.jp/index.html
Scribing machine TOKYO SEIMITSU CO., LTD. A-WS-100A http://www.accretech.jp/english/product/semicon/wms/aws100s.html
Wire-bonding machine WEST·BOND  7476D-79 https://www.hisol.jp/products/bonder/wire/mgb/b.html
Physical Properties Measurement System Quantum Design PPMS http://www.qdusa.com/products/ppms.html
Lock-in amplifier Stanford Research Systems SRS830 http://www.thinksrs.com/products/SR810830.htm
Source meter Textronix KEITHLEY 2612A http://www.tek.com/keithley-source-measure-units/smu-2600b-series-sourcemeter
KClO4 Sigma-Aldrich 241830 http://www.sigmaaldrich.com/catalog/product/sigald/241830?lang=ja&region=JP
PEG WAKO 168-09075 http://www.siyaku.com/uh/Shs.do?dspCode=W01W0116-0907
IPA WAKO 169-28121 http://www.siyaku.com/uh/Shs.do?dspWkfcode=169-28121
MIBK WAKO 131-05645 http://www.siyaku.com/uh/Shs.do?dspCode=W01W0113-0564
PMMA MicroChem PMMA http://microchem.com/Prod-PMMA.htm
Acetone WAKO 012-26821 http://www.siyaku.com/uh/Shs.do?dspWkfcode=012-26821
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Tags

Keywords: Electric-field ControlElectronic StatesWS2 NanodevicesElectrolyte GatingQuantum Phase TransitionsElectric-field-induced SuperconductivityTungsten Disulfide NanotubesTungsten Disulfide FlakesPMMA CoatingSpin-coating
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Qin, F., Ideue, T., Shi, W., Zhang, Y., Suzuki, R., Yoshida, M., Saito, Y., Iwasa, Y. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating. J. Vis. Exp. (134), e56862, doi:10.3791/56862 (2018).
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