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Elektrisk-field kontrol af elektroniske stater i WS2 Nanodevices af elektrolyt Gating

Published: April 12, 2018
doi:
10.3791/56862
, , , , , , ,
1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics,The University of Tokyo, 2Materials Sciences Division,Lawrence Berkeley National Laboratory, 3Institute of Scientific and Industrial Research,Osaka University, 4Max Planck Institute for Solid State Research, 5RIKEN Center for Emergent Matter Science (CEMS)

Summary

Vi præsenterer her, en protokol for at kontrollere Flyselskabet antallet i faste stoffer ved hjælp af elektrolytten.

Abstract

En metode til carrier nummer kontrol af elektrolyt gating er påvist. Vi har fået WS2 tynde flager med atomically flad overflade via scotch tape metode eller individuelle WS2 nanorør ved at sprede suspension af WS2 nanorør. De valgte prøver har været fremstillet i enheder ved brug af elektron beam litografi og elektrolyt er sat på enhederne. Vi har karakteriseret de elektroniske egenskaber af enheder under anvende gate spænding. I regionen lille gate spænding akkumuleres ioner i elektrolytten på overfladen af prøverne, der fører til det store elektriske potentielle drop og resulterende elektrostatisk doping på grænsefladen. Ambipolar overførsel kurve er blevet observeret i denne elektrostatisk doping region. Når porten spændingen er yderligere steget, mødte vi en anden drastisk forøgelse af kilde-afløb strøm, som indebærer, at ioner er imidlerid i WS2 lag og elektrokemiske carrier doping er realiseret. I sådanne elektrokemiske doping region, er blevet observeret superledning. Den fokuserede teknik giver en kraftfuld strategi for at nå elektriske-gemt-induceret quantum fase overgang.

Introduction

Kontrol af carrier antallet er den centrale teknik for at realisere quantum fase overgangen i tørstof1. I den konventionelle Felteffekttransistor (FET), er det opnåede ved brug af solid gate1,2. I sådan en indretning er elektriske potentielle gradient ensartet overalt i de dielektriske materialer så induceret carrier nummeret på grænsefladen er begrænset, vist i figur 1a.

På den anden side, kan vi opnå højere carrier massefylden ved grænseflade eller bulk ved at erstatte de solide dielektriske materialer med Ioniske geler/væsker eller polymer elektrolytter3,4,5,6, 7,8,9,10,11 (figur 1b). I den elektrostatiske doping ved brug af de ionisk væske, elektrisk tolags transistoren (EDLT) struktur er dannet på grænsefladen mellem ionisk væske og prøve, generere stærk elektrisk felt (> 0,5 V/Å) selv ved lav spænding på bias. Deraf følgende høje carrier tæthed (> 1014 cm-2) induceret på interface10,12,13 årsag den nye elektroniske egenskaber eller quantum fase overgang som elektrisk-felt-induceret ferromagnetism14, Coulomb blokade15, ambipolar transport16,17,18,19,20, 21 , 22 , 23 , 24 , 25 , 26 , 27, dannelse af PN krydset og deraf følgende electroluminance28,29,30, store graduering af termoelektriske beføjelser31,32, opkræve tæthed bølge og Mott overgange33,34,35, og El-felt-induceret insulator-metal overgang36,37 herunder El-felt-induceret superledning9 ,10,11,38,39,40,41,42,43,44 ,45,46,47,48,49.

I den elektrolyt gating (figur 1 c), ioner er ikke kun akkumuleret i grænsefladen til form EDLT, men kan også imidlerid i lag af to-dimensionelle materialer termisk vrangforestilling uden skadelige prøve under anvende store gate spænding, fører til den elektrokemiske doping8,9,11,34,38,50,51,52,53 . Således kan vi drastisk ændre carrier antallet i forhold til de konventionelle Felteffekttransistor ved hjælp af solid porten. Især er elektrisk-felt-induceret superledning9,11,34,38,50 realiseret ved hjælp af elektrolyt gating i regionen af store luftfartsselskab nummeret hvor vi ikke kan få adgang efter den almindelige metode, solid gating.

I denne artikel vil vi indføre denne unikke teknik af carrier nummer kontrol i faste stoffer og oversigt transistor drift og El-felt-induceret superledning i halvledende WS2 prøver som WS2 flager og WS2 nanorør54,55,56,57.

Protocol

1. spredning af WS 2 nanorør (NTs) på underlaget Sprede WS2 NT pulvere til isopropylalkohol (IPA, koncentration over 99,8%) med rette fortyndet forhold (ca. 0,1 mg/mL) ved hjælp af sonikering i 20 min.Bemærk: Den mangeårige sonikering hjælper at gøre WS2 NTs ensartet suspenderet i IPA væske og separat velformet individuelle WS2 NTs fra amorfe WS2 eller andre skrammel, samt at fjerne skrald akkumulere på WS2 NTs overflade. <strong cla…

Representative Results

De typiske transistor operationer af en individuel WS2 NT og en WS2 flake enheder er vist i figur 3a og 3b, henholdsvis, hvor kilden dræne nuværende (jegDS) som en funktion af gate spænding (V G) pænt opererer i en ambipolar tilstand, viser en bemærkelsesværdig kontrast til unipolære gate svar af den konventionelle solid låge FET i tidligere publikation58…

Discussion

I både WS2 NTs og flager, har vi med succes kontrolleres de elektriske egenskaber af elektrostatiske eller electro kemiske luftfartsselskab doping.

I elektrostatisk doping region, er blevet observeret ambipolar transistor operation. Sådanne ambipolar overførsel kurve med en high on/off forhold (> 102) observeret i lav bias spænding angiver den effektive carrier doping på grænsefladen af elektrolyt gating teknik for tuning Fermi niveau af disse systemer.

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Declarações

The authors have nothing to disclose.

Acknowledgements

Vi anerkender følgende finansielle støtte; Licensbetaling for specielt fremmes forskning (No. 25000003) fra JSP’ER, licensbetaling for forskning aktivitet opstart (No.15H06133) og udfordrende forskning (sonderende) (nr. JP17K18748) fra MEXT af Japan.

Materials

Sonication machine SND Co., Ltd. US-2 http://www.senjyou.jp/
Spin-coater machine ACTIVE Co.,Ltd. ACT-300AII http://www.acti-ve.co.jp/spincoater/standard/act300a2.html
Hot-plate TAIYO HP131224 http://www.taiyo-kabu.co.jp/products/detail.php?product_id=431
Optical Microscopy OLYMPUS BX51 https://www.olympus-ims.com/ja/microscope/bx51p/
Electron Beam Lithography machine ELIONIX INC. ELS-7500I https://www.elionix.co.jp/index.html
Scribing machine TOKYO SEIMITSU CO., LTD. A-WS-100A http://www.accretech.jp/english/product/semicon/wms/aws100s.html
Wire-bonding machine WEST·BOND  7476D-79 https://www.hisol.jp/products/bonder/wire/mgb/b.html
Physical Properties Measurement System Quantum Design PPMS http://www.qdusa.com/products/ppms.html
Lock-in amplifier Stanford Research Systems SRS830 http://www.thinksrs.com/products/SR810830.htm
Source meter Textronix KEITHLEY 2612A http://www.tek.com/keithley-source-measure-units/smu-2600b-series-sourcemeter
KClO4 Sigma-Aldrich 241830 http://www.sigmaaldrich.com/catalog/product/sigald/241830?lang=ja&region=JP
PEG WAKO 168-09075 http://www.siyaku.com/uh/Shs.do?dspCode=W01W0116-0907
IPA WAKO 169-28121 http://www.siyaku.com/uh/Shs.do?dspWkfcode=169-28121
MIBK WAKO 131-05645 http://www.siyaku.com/uh/Shs.do?dspCode=W01W0113-0564
PMMA MicroChem PMMA http://microchem.com/Prod-PMMA.htm
Acetone WAKO 012-26821 http://www.siyaku.com/uh/Shs.do?dspWkfcode=012-26821
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Tags

Electric-field ControlElectronic StatesWS2 NanodevicesElectrolyte GatingQuantum Phase TransitionsElectric-field-induced SuperconductivityTungsten Disulfide NanotubesTungsten Disulfide FlakesPMMA CoatingSpin-coating
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Qin, F., Ideue, T., Shi, W., Zhang, Y., Suzuki, R., Yoshida, M., Saito, Y., Iwasa, Y. Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating. J. Vis. Exp. (134), e56862, doi:10.3791/56862 (2018).
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