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Silicium-Metall-Oxid-Halbleiter-Quantenpunkte für Einzelelektronen Pumping
JoVE Journal
Engenharia
This content is Free Access.
JoVE Journal Engenharia
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
DOI:

14:58 min

June 03, 2015

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Capítulos

  • 00:05Título
  • 03:11Creation of the Field Oxide Layer, Ohmic Contacts, and the Gate Oxide
  • 07:10Gate Patterning
  • 09:20Device Integrity Tests
  • 10:57Results: Device Integrity Test Results and Millikelvin Measurements
  • 12:13Conclusion

Summary

Tadução automática

The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

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