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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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硫化过渡金属膜制备大面积垂直2D 晶体杂化结构

DOI:

10.3791/56494-v

•

08:50 min

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November 28, 2017

•

Chong-Rong Wu², Tung-Wei Chu³, Kuan-Chao Chen², Shih-Yen Lin²

¹Graduate Institute of Electronics Engineering,National Taiwan University, ²Research Center for Applied Sciences,Academia Sinica, ³Graduate Institute of Photonics and Optoelectronics,National Taiwan University

Capítulos

00:05Título
00:47WS₂/MoS₂Vertical Heterostructure Growth
03:49Transition Metal Dichalcogenide (TMD) Thin Film Transfer
06:21Results: Growth Mechanisms and Transistor Performance
08:11Conclusion

Summary

Tadução automática

通过 pre-deposited 过渡金属的硫化, 可以制备大面积和垂直2D 晶体杂化结构。本报告还演示了薄膜传输和器件制作程序。

Tags

Keywords: 2D Crystal Heterostructures Vertical 2D Materials Sulfurization Transition Metal Films Device Fabrication RF Sputtering Sapphire Substrate Molybdenum Target Sulfur Powder Tube Furnace Argon Gas Molybdenum Disulfide Tungsten Target

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