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Electric-field Control of Electronic States in WS
2
Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS
2
Nanodevices by Electrolyte Gating
Electric-field Control of Electronic States in WS
2
Nanodevices by Electrolyte Gating
DOI:
10.3791/56862-v
•
10:36 min
•
April 12, 2018
•
Feng Qin
,
Toshiya Ideue
,
Wu Shi
,
Yijin Zhang
4
,
Ryuji Suzuki
,
Masaro Yoshida
,
Yu Saito
,
Yoshihiro Iwasa
5
1
Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics
,
The University of Tokyo
,
2
Materials Sciences Division
,
Lawrence Berkeley National Laboratory
,
3
Institute of Scientific and Industrial Research
,
Osaka University
,
4
Max Planck Institute for Solid State Research
,
5
RIKEN Center for Emergent Matter Science (CEMS)
Capítulos
00:04
Título
00:38
Dispersion of WS
2
Nanotubes (NTs) on a Si/SiO
2
Substrate
01:35
Application of WS
2
Flakes to a Si/SiO
2
Substrate with the Tape Method
02:28
Device Fabrication by Electron Beam Lithography
05:59
Electrode Deposition
07:17
Device Completion and Transport Measurements
08:31
Results: Transistor Operations of WS
2
Nanotube and Flake Devices
09:56
Conclusion
Summary
Tadução automática
English (Original)
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Tadução automática
Here, we present a protocol to control the carrier number in solids by using the electrolyte.
Tags
Electric-field Control
Electronic States
WS2 Nanodevices
Electrolyte Gating
Quantum Phase Transitions
Electric-field-induced Superconductivity
Tungsten Disulfide Nanotubes
Tungsten Disulfide Flakes
PMMA Coating
Spin-coating
Article
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