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Encifrede Nanometer Electron-Beam litografi med en Aberration-korrigeret Scanning transmissions elektron mikroskop
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Capítulos
- 00:04Título
- 01:03Sample Preparation for Resist Coating
- 02:27Load Sample in STEM, Map Window Coordinates, and Perform High-Resolution Focusing
- 04:54Expose Patterns Using an Aberration-Corrected STEM Equipped with a Pattern Generator System
- 06:44Resist Development and Critical Point Drying
- 08:09Results: Nanometer-Scale Lithographic Patterns in HSQ and PMMA (Positive and Negative Tone)
- 09:14Conclusion
Vi bruger en aberration-korrigeret scanning transmissions elektronmikroskop til at definere encifrede nanometer mønstre i to udbredte elektronstråle modstår: poly (methylmethacrylat) og brint silsesquioxane. Modstå mønstre kan replikeres i målet materiale valg med encifrede nanometer troskab med liftoff, plasma ætsning, og modstå infiltration af organometallics.
