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硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证

DOI:
10.3791/58897-v

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06:57 min

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July 17, 2020

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, , ,
1Department of Materials Engineering,The University of Tokyo, 2Department of Electrical and Electronic Information Engineering,Toyohashi University of Technology, 3Department of Materials Science and Engineering,Massachusetts Institute of Technology

Capítulos

  • 00:04Introduction
  • 00:34Experimental Verification Procedure
  • 04:29Results: Reduction of Threading Dislocation Density in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
  • 06:12Conclusion

Summary

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Tadução automática

提出了降低硅上半圆柱空隙的锗外延层螺纹位错（TD）密度的理论计算和实验验证。给出了基于TD与表面相互作用的计算方法，通过像力、TD测量和透射电子显微镜对TD的观测。

Tags

Dislocation ReductionGermanium Epitaxial LayersSemicylindrical VoidsSiliconThreading Dislocation DensitySelective Epitaxial GrowthBoron-doped P-siliconSilicon DioxidePhotoresistBuffered Hydrofluoric AcidGermanium Growth

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