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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

DOI:
10.3791/60167-v

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07:00 min

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June 25, 2020

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, , , , , , ,
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors,Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering,Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics,Peking University

Capítulos

  • 00:04Introduction
  • 00:40Atmospheric-Pressure Chemical Vapor Deposition (APCVD) Growth of Graphene on Nano-Patterned SapphireSubstrate (NPSS) and Nitrogen (N2)-Plasma Treatment
  • 02:03Metal-Organic Chemical Vapor Deposition (MOCVD) Growth of Aluminum Nitrogen (AlN) on Graphene-NPSS and of Aluminum-Gallium-Nitrogen (AlGaN) Multiple Quantum Wells (MQW)
  • 03:08AlGaN-Based Deep Ultraviolet Light-Emitting Diode (DUV-LED) Fabrication
  • 06:02Results: Representative AIN Characterization
  • 06:32Conclusion

Summary

Tadução automática

Tadução automática

A protocol for graphene-assisted growth of high-quality AlN films on nano-patterned sapphire substrate is presented.

Tags

Keywords: GrapheneQuasi-van Der Waals EpitaxyAlN FilmNano-patterned Sapphire SubstrateDeep Ultraviolet LEDMOCVDTrimethylaluminumAmmoniaAluminum Gallium NitrogenQuantum WellsP-type LayersInductive Coupled Plasma Etching

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