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等离子体辅助分子束外延法制备的锌极性 BeMgZnO/氧化锌异质结构肖特基二极管的制备

JoVE Journal
Engineering

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JoVE Journal Engineering

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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等离子体辅助分子束外延法制备的锌极性 BeMgZnO/氧化锌异质结构肖特基二极管的制备

DOI:

10.3791/58113-v

•

14:16 min

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October 23, 2018

•

Kai Ding, Vitaliy Avrutin, Natalia Izioumskaia, Md Barkat Ullah, Ümit Özgür, Hadis Morkoç

¹Department of Electrical and Computer Engineering,Virginia Commonwealth University

Chapters

00:04Title
01:01Growth and Preparation of GaN Template by Metal-Organic Chemical Vapor Deposition (MOCVD)
04:42Molecular Beam Epitaxy (MBE) Growth of BeMgZnO/ZnO Heterostructures
08:35Schottky Diode Fabrication
10:09Results: Characterization of Zn-Polar Be_0.02Mg_0.26ZnO/ZnO Heterostructures and Ag/Be_0.02Mg_0.26ZnO/ZnO Schottky Diodes
12:07Conclusion

Summary

Automatic Translation

实现高品质肖特基接触是异质结构场效应晶体管 (HFETs) 实现高效栅极调制的必要条件。本文介绍了基于 GaN 模板的等离子体辅助分子束外延生长的高浓度二维电子气体 (2DEG) 的锌极性 BeMgZnO/氧化锌异质结构中肖特基二极管的制备方法和特点。

Tags

Schottky Diodes Zn-polar BeMgZnO/ZnO Heterostructure Plasma-assisted Molecular Beam Epitaxy Zinc Oxide Heterojunction Field Effect Transistors Two-dimensional Electron Gas High-frequency High-power Field Effect Transistors Electron Saturation Schottky Contact Stability Solar Plant Detectors Chemical Sensors Biosensors Sapphire Substrate Metal Organic CVD Aluminum Nitride Gallium Nitride

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