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Ohmse Contact Fabrication Met behulp van een Focused-Ion Beam Techniek en elektrische karakterisatie voor Layer halfgeleider nanostructuren
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Ohmse Contact Fabrication Met behulp van een Focused-Ion Beam Techniek en elektrische karakterisatie voor Layer halfgeleider nanostructuren

Article DOI: 10.3791/53200-v • 08:12 min • December 5th, 2015
December 5th, 2015 •
1, 2, 2, 2
1Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 2Department of Electronic Engineering, National Taiwan University of Science and Technology

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Engineering gericht-ion beam (FIB) ohmse contact laag halfgeleidermateriaal molybdeen diselenide (Mose Molybdeendisulfide (MoS De elektrische geleidbaarheid atomic force microscopie (AFM) hoge-resolutie transmissie elektronenmicroscopie (HRTEM) geselecteerd-area electron diffractometrie (SAED) energie-dispersieve X-ray spectroscopy (EDX)
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