Junxi Wang State Key Laboratory of Solid-State Lighting, Institute of Semiconductors Chinese Academy of Sciences Biography Publications Institution JoVE Articles Junxi Wang has not added a biography. If you are Junxi Wang and would like to personalize this page please email our Author Liaison for assistance. Publications Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes Through Using Work Function Tunable Cu Nanowires As the Top Transparent Electrode The Journal of Physical Chemistry Letters. Apr, 2020 | Pubmed ID: 32141757 Crystal Phase Evolution in Kinked GaN Nanowires Nanotechnology. Apr, 2020 | Pubmed ID: 31860878 Surface-Polarity-Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays Angewandte Chemie (International Ed. in English). Jan, 2020 | Pubmed ID: 31670455 Beyond 100 THz-spanning Ultraviolet Frequency Combs in a Non-centrosymmetric Crystalline Waveguide Nature Communications. Jul, 2019 | Pubmed ID: 31278261 Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs Micromachines. May, 2019 | Pubmed ID: 31086010 Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene Advanced Materials (Deerfield Beach, Fla.). Jun, 2019 | Pubmed ID: 30993771 Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence Nanotechnology. Jan, 2019 | Pubmed ID: 30485254 Method of the Out-of-band Rejection Improvement of the AlN Based Surface Acoustic Wave Filters Ultrasonics. Jan, 2019 | Pubmed ID: 30056273 Direct Van Der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂ Materials (Basel, Switzerland). Dec, 2018 | Pubmed ID: 30518146 Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si Materials (Basel, Switzerland). Nov, 2018 | Pubmed ID: 30486245 High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer Advanced Materials (Deerfield Beach, Fla.). Jul, 2018 | Pubmed ID: 29883036 Ultrafast Growth of Horizontal GaN Nanowires by HVPE Through Flipping the Substrate Nanoscale. Mar, 2018 | Pubmed ID: 29521388 Ultraviolet Wavelength Identification Using Energy Distribution of Hot Electrons ACS Omega. Jul, 2017 | Pubmed ID: 31457684 Enhancing Light Coupling and Emission Efficiencies of AlGaN Thin Film and AlGaN/GaN Multiple Quantum Wells with Periodicity-wavelength Matched Nanostructure Array Nanoscale. Oct, 2017 | Pubmed ID: 28976517 Nanostructure Nitride Light Emitting Diodes Via the Talbot Effect Using Improved Colloidal Photolithography Nanoscale. Jun, 2017 | Pubmed ID: 28537630 Selective-area Growth of Periodic Nanopyramid Light-emitting Diode Arrays on GaN/sapphire Templates Patterned by Multiple-exposure Colloidal Lithography Nanotechnology. Mar, 2017 | Pubmed ID: 28103586 Cross-stacked Carbon Nanotubes Assisted Self-separation of Free-standing GaN Substrates by Hydride Vapor Phase Epitaxy Scientific Reports. 06, 2016 | Pubmed ID: 27340030 Formation and Characteristics of AlGaN-based Three-dimensional Hexagonal Nanopyramid Semi-polar Multiple Quantum Wells Nanoscale. Jun, 2016 | Pubmed ID: 27174102 Nitride-based Micron-scale Hexagonal Pyramids Array Vertical Light Emitting Diodes by N-polar Wet Etching Optics Express. Feb, 2013 | Pubmed ID: 23481812 Improving Light Extraction of InGaN-based Light Emitting Diodes with a Roughened P-GaN Surface Using CsCl Nano-islands Optics Express. Jan, 2011 | Pubmed ID: 21263645 Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation Nanoscale Research Letters. Jul, 2009 | Pubmed ID: 20596453 Graphène-Assisté Quasi-van der Waals Epitaxy of AlN Film sur substrat saphir nano-modelé pour les diodes électroluminescentes ultraviolettes Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University JoVE 60167 Engineering
Graphène-Assisté Quasi-van der Waals Epitaxy of AlN Film sur substrat saphir nano-modelé pour les diodes électroluminescentes ultraviolettes Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University JoVE 60167 Engineering