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Probing C<sub> 84</sub> -embedded Si Substrat Utiliser Scanning Probe Microscopy and Molecular Dynamics
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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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Probing C<sub> 84</sub> -embedded Si Substrat Utiliser Scanning Probe Microscopy and Molecular Dynamics

DOI:
10.3791/54235-v

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13:58 min

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September 28, 2016

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, , , ,
1Department of Physics and Institute of Nanoscience,National Chung Hsing University, 2Metallurgy Section, Materials & Electro-Optics Research Division,National Chung-Shan Institute of Science and Technology, 3National Center for High-Performance Computing

Capitoli

  • 00:05Titolo
  • 01:21Fabrication of Hexagonal-closed-packaged (HCP) Overlayer of C84 in Si Substrate
  • 02:57Measurements of Electronic Properties of C84-embedded Si Substrate
  • 05:07Measurements of Surface Magnetism
  • 06:17Measurements of Nanomechanical Properties by AFM
  • 06:49Measurement of Nanomechanical Properties by Molecular Dynamics Simulation
  • 11:05Results: Characterization of C84-embedded Silicon Substrate by Nanomeasurements and Molecular Dynamic Simulation
  • 12:46Conclusion

Summary

Traduzione automatica

Traduzione automatica

This paper reports the nanomaterial fabrication of a fullerene Si substrate inspected and verified by nanomeasurements and molecular dynamic simulation.

Tags

Keywords: C84-embedded Si SubstrateScanning Probe MicroscopyMolecular DynamicsNanomaterialsNanostructuresSilicon (111) SubstrateC84 DepositionFullereneUHV-STMHeterojunctionElectronic PropertiesOptoelectronic PropertiesMechanical PropertiesMagnetic PropertiesField Emission Properties

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