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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
 

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Article DOI: 10.3791/61026-v • 09:49 min • May 13th, 2020
May 13th, 2020 •
*1, *2, 1
1Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, 2RMIT Microscopy and Microanalysis Facility, RMIT University
* These authors contributed equally

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Presented here is a protocol for analyzing nanostructural changes during in situ biasing with transmission electron microscopy (TEM) for a stacked metal-insulator-metal structure. It has significant applications in resistive switching crossbars for the next generation of programmable logic circuits and neuromimicking hardware, to reveal their underlying operation mechanisms and practical applicability.

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In-situ Transmission Electron Microscopy Biasing Fabrication Asymmetric Crossbars Mixed-phased A-VOx Amorphous Vanadium Oxide Nano-structural Changes Device Biasing Metal-insulator-metal Device Structure High Vacuum In-situ Temperature Analysis Atomic Level Changes Electrode Patterning Photoresist Wafer Laser Exposure Developer Physical Vapor Deposition System Titanium Deposition Platinum Deposition
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