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Journal / Chemistry / 化学合成チタン酸バリウム多孔質セラミックス薄膜の気孔率誘起歪による強誘電相の熱安定化…
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Chemistry

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JoVE Journal Chemistry
化学合成チタン酸バリウム多孔質セラミックス薄膜の気孔率誘起歪による強誘電相の熱安定化
 
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化学合成チタン酸バリウム多孔質セラミックス薄膜の気孔率誘起歪による強誘電相の熱安定化

Article DOI: 10.3791/57441-v • 08:00 min • March 27th, 2018
March 27th, 2018 •
1,2, 3, 3,4, 3,4, 5,6, 3,4
1Research Institute for Science and Technology (RIST), Tokyo University of Science (TUS), 2International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), 3International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 4Australian Institute for Innovative Materials (AIIM), University of Wollongong, 5School of Chemical Engineering, Australian Institute for Bioengineering and Nanotechnology (AIBN), University of Queensland, 6Department of Plant & Environmental New Resources, Kyung Hee University

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ここでは、有機テンプレートとして使用される自己組織化両親媒性界面活性剤ミセルの界面活性剤によるゾル-ゲル法による (3本) チタン酸バリウム多孔質セラミックス薄膜の合成のためのプロトコルを提案する.

Tags

化学、問題 133、チタン酸バリウム、界面活性剤によるゾル-ゲル法、多孔性薄膜、強誘電相、熱安定性、Anisotorpic 株
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