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JoVE Journal Chemistry
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
 

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Article DOI: 10.3791/60798-v • 12:32 min • May 24th, 2020
May 24th, 2020 •
*1, *2, *1, *2, *3
1School of Technology and Sciences, São Paulo State University - UNESP, 2Scholl of Electronic Engineering, Bangor University, 3Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP
* These authors contributed equally

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요약
Automatic Translation

Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

Tags

Aluminum Oxide Anodization Thin-film Transistors Dielectric Layer Electrolytic Solution Substrate Cleaning Aluminum Electrode Deposition Anodization Process Electrical Characterization Plackett-Burman Design Of Experiments
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