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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
 

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Article DOI: 10.3791/61026-v • 09:49 min • May 13th, 2020
May 13th, 2020 •
*1, *2, 1
1Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, 2RMIT Microscopy and Microanalysis Facility, RMIT University
* These authors contributed equally

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요약
Automatic Translation

Presented here is a protocol for analyzing nanostructural changes during in situ biasing with transmission electron microscopy (TEM) for a stacked metal-insulator-metal structure. It has significant applications in resistive switching crossbars for the next generation of programmable logic circuits and neuromimicking hardware, to reveal their underlying operation mechanisms and practical applicability.

Tags

In-situ Transmission Electron Microscopy Biasing Fabrication Asymmetric Crossbars Mixed-phased A-VOx Amorphous Vanadium Oxide Nano-structural Changes Device Biasing Metal-insulator-metal Device Structure High Vacuum In-situ Temperature Analysis Atomic Level Changes Electrode Patterning Photoresist Wafer Laser Exposure Developer Physical Vapor Deposition System Titanium Deposition Platinum Deposition
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