Chapter 10
Basics of Semiconductors
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom…
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the…
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because…
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as…
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential…
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the…
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no…
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky…
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source,…
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given…
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the…
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
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This work presents a protocol employing the microwave photoconductivity decay (μ-PCD) for measurement of the carrier lifetime in semiconductor…
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Extended defects such as dislocations and grain boundaries have a strong influence on the performance of microelectronic devices and on other…
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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As mass-produced silicon transistors have reached the nano-scale, their behavior and performances are increasingly affected, and often deteriorated,…
