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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Capítulos
- 00:05Título
- 01:32Surface Cleaning
- 02:50Monolayer Formation
- 03:43Nanowire Synthesis
- 05:02Nanowire Drop-casting onto Substrate and Rapid Thermal Anneal
- 06:24Sheet Resistance Measurements, Nanowire Device Fabrication and Characterization
- 08:03Results: Sheet Resistance Measurements and Nanowire FET I-V Curves Using Monolayer Contact Doped Materials
- 09:08Conclusion
A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.
