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Grafeen-Geassisteerde Quasi-van der Waals Epitaxy van AlN Film op Nano-Patroon Sapphire Substraat voor Ultraviolet Light Emitting Diodes
JoVE Journal
Engineering
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JoVE Journal Engineering
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
DOI:

07:00 min

June 25, 2020

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Chapters

  • 00:04Introduction
  • 00:40Atmospheric-Pressure Chemical Vapor Deposition (APCVD) Growth of Graphene on Nano-Patterned SapphireSubstrate (NPSS) and Nitrogen (N2)-Plasma Treatment
  • 02:03Metal-Organic Chemical Vapor Deposition (MOCVD) Growth of Aluminum Nitrogen (AlN) on Graphene-NPSS and of Aluminum-Gallium-Nitrogen (AlGaN) Multiple Quantum Wells (MQW)
  • 03:08AlGaN-Based Deep Ultraviolet Light-Emitting Diode (DUV-LED) Fabrication
  • 06:02Results: Representative AIN Characterization
  • 06:32Conclusion

Summary

Automatic Translation

Een protocol voor grafeen-ondersteunde groei van hoogwaardige AlN-films op saffiersubstraat met nanopatroon wordt gepresenteerd.

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