Tongbo Wei State Key Laboratory of Solid-State Lighting, Institute of Semiconductors Chinese Academy of Sciences Biography Publications Institution JoVE Articles Tongbo Wei has not added a biography. If you are Tongbo Wei and would like to personalize this page please email our Author Liaison for assistance. Publications Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes Through Using Work Function Tunable Cu Nanowires As the Top Transparent Electrode The Journal of Physical Chemistry Letters. Apr, 2020 | Pubmed ID: 32141757 Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer Advanced Materials (Deerfield Beach, Fla.). Jul, 2019 | Pubmed ID: 31140651 Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs Micromachines. May, 2019 | Pubmed ID: 31086010 Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene Advanced Materials (Deerfield Beach, Fla.). Jun, 2019 | Pubmed ID: 30993771 Horizontal GaN Nanowires Grown on Si (111) Substrate: the Effect of Catalyst Migration and Coalescence Nanotechnology. Jan, 2019 | Pubmed ID: 30485254 Direct Van Der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂ Materials (Basel, Switzerland). Dec, 2018 | Pubmed ID: 30518146 Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si Materials (Basel, Switzerland). Nov, 2018 | Pubmed ID: 30486245 Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire Journal of the American Chemical Society. 09, 2018 | Pubmed ID: 30175921 High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer Advanced Materials (Deerfield Beach, Fla.). Jul, 2018 | Pubmed ID: 29883036 Ultrafast Growth of Horizontal GaN Nanowires by HVPE Through Flipping the Substrate Nanoscale. Mar, 2018 | Pubmed ID: 29521388 Selective-area Growth of Periodic Nanopyramid Light-emitting Diode Arrays on GaN/sapphire Templates Patterned by Multiple-exposure Colloidal Lithography Nanotechnology. Mar, 2017 | Pubmed ID: 28103586 Cross-stacked Carbon Nanotubes Assisted Self-separation of Free-standing GaN Substrates by Hydride Vapor Phase Epitaxy Scientific Reports. 06, 2016 | Pubmed ID: 27340030 Recent Advancement on Micro-/nano-spherical Lens Photolithography Based on Monolayer Colloidal Crystals Advances in Colloid and Interface Science. Feb, 2016 | Pubmed ID: 26732300 Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity Small (Weinheim an Der Bergstrasse, Germany). Oct, 2015 | Pubmed ID: 26179658 Light Extraction Enhancement of Bulk GaN Light-emitting Diode with Hemisphere-cones-hybrid Surface Optics Express. Aug, 2012 | Pubmed ID: 23038492 Light Extraction Efficiency Improvement by Multiple Laser Stealth Dicing in InGaN-based Blue Light-emitting Diodes Optics Express. Mar, 2012 | Pubmed ID: 22418563 Improving Light Extraction of InGaN-based Light Emitting Diodes with a Roughened P-GaN Surface Using CsCl Nano-islands Optics Express. Jan, 2011 | Pubmed ID: 21263645 Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation Nanoscale Research Letters. Jul, 2009 | Pubmed ID: 20596453 Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University JoVE 60167 Ingénierie
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes Xiang Zhang*1,2, Zhaolong Chen*3, Hongliang Chang1,2, Jianchang Yan1,2, Shenyuan Yang2,4, Junxi Wang1,2, Peng Gao5, Tongbo Wei1,2 1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University JoVE 60167 Ingénierie