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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope
 

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Article DOI: 10.3791/52447-v • 09:26 min • June 26th, 2015
June 26th, 2015 •
1,2, 1, 1,3, 1, 1, 1, 1, 1, 4, 4, 4, 1,2
1Fraunhofer Institute for Ceramic Technologies and Systems, 2Dresden Center for Nanoanalysis, Technische Universität Dresden, 3Globalfoundries Fab 8, 4Globalfoundries Fab 1

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The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.

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In Situ Time-dependent Dielectric Breakdown Transmission Electron Microscope Failure Mechanism Microelectronic Devices On-chip Interconnect Stacks Product Reliability Post-mortem Failure Analysis Degradation Kinetics Experimental Approaches Procedures TDDB Degradation Cu/ULK Interconnect Stacks Imaging Chemical Analysis Kinetic Process Electrical Test Dielectrics Electron Tomography Directed Cu Diffusion Insulating Dielectrics Interconnect Stacks Microelectronic Products Active Devices
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