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Plasma-Assisted Molecular Beam Epitaxy Growth of Mg 3 N 2 and Zn 3 N 2 Thin Films Plasma-Assisted Molecular Beam Epitaxy Growth of Mg 3 N 2 and Zn 3 N 2 Thin Films Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films Plasma-
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JoVE Journal Ingegneria
Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
DOI:

13:05 min

May 11, 2019

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Capitoli

  • 00:00Titolo
  • 00:57MgO Substrate Preparation
  • 01:50Operation of VG V80 MBE
  • 02:13Substrate Loading
  • 04:04Metal Flux Measurements
  • 05:59Nitrogen Plasma
  • 06:51In-situ Laser Light Scattering
  • 08:35Growth Rate Determination
  • 09:13Risultati
  • 10:46Conclusion

Summary

Traduzione automatica

Cet article décrit la croissance des films épitaxiaux de Mg3N2 et Zn3N2 sur les substrats MgO par épitaxie de faisceau moléculaire assistée par plasma avec le gaz N2 comme source d'azote et surveillance optique de la croissance.

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