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阳极化参数对薄膜晶体管氧化铝介电层的影响

JoVE Journal
Chimica
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JoVE Journal Chimica

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

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阳极化参数对薄膜晶体管氧化铝介电层的影响

DOI:

10.3791/60798-v

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12:32 min

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May 24, 2020

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Tiago C. Gomes*¹, Dinesh Kumar*², Neri Alves*¹, Jeff Kettle*², Lucas Fugikawa-Santos*³

¹School of Technology and Sciences,São Paulo State University – UNESP, ²Scholl of Electronic Engineering,Bangor University, ³Institute of Geosciences and Exact Sciences,São Paulo State University – UNESP

Capitoli

00:00Introduction
02:48Preparation of the Electrolytic Solution
03:55Substrate Cleaning
05:24Al Gate Electrode Evaporation
06:31Anodization of the Al Layer
07:41ZnO Active Layer Deposition
08:38Drain and Source Electrodes Deposition
09:36TFT Electrical Characterization
10:09Risultati
11:22Conclusion

Summary

Traduzione automatica

氧化锌薄膜晶体管（TTs）氧化铝介电层生长的阳极化参数各不相同，以确定对电气参数响应的影响。方差分析（ANOVA）应用于 Plackett-Burman 实验设计（DOE），以确定导致器件性能优化的制造条件。

Tags

Aluminum Oxide Anodization Thin-film Transistors Dielectric Layer Electrolytic Solution Substrate Cleaning Aluminum Electrode Deposition Anodization Process Electrical Characterization Plackett-Burman Design Of Experiments

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