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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
 

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Article DOI: 10.3791/57502-v 09:59 min June 23rd, 2018
June 23rd, 2018

챕터

요약

We present a detailed method to fabricate a deformable lateral NIPIN phototransistor array for curved image sensors. The phototransistor array with an open mesh form, which is composed of thin silicon islands and stretchable metal interconnectors, provides flexibility and stretchability. The parameter analyzer characterizes the electrical property of the fabricated phototransistor.

Tags

Keywords: Flexible Image Sensor Lateral NIPIN Phototransistors Silicon On Insulator Photolithography Plasma-enhanced Chemical Vapor Deposition Polyimide Annealing
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