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通过硅直接晶圆粘接制造均匀纳米级腔

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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

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通过硅直接晶圆粘接制造均匀纳米级腔

DOI:

10.3791/51179-v

•

10:32 min

•

January 09, 2014

•

Stephen R. D. Thomson, Justin K. Perron³, Mark O. Kimball, Sarabjit Mehta, Francis M. Gasparini

¹Department of Physics,The State University of New York at Buffalo, ²Joint Quantum Institute,University of Maryland, ³The National Institute of Standards and Technology, ⁴Cryogenics and Fluids Branch,NASA Goddard Space Flight Center, ⁵HRL Laboratories

Capítulos

00:05Título
01:54Bonding Preparation
04:38Wafer Bonding
08:04Results: Analysis of Bonded Wafers
09:59Conclusion

Summary

Tadução automática

描述了永久粘合两个硅晶片以实现统一外壳的方法。这包括晶圆制备、清洁、RT 粘接和退化过程。由此产生的粘结晶圆（细胞）具有外壳均匀性^~1%1，2。由此产生的几何形状允许测量封闭的液体和气体。

Tags

Keywords: Silicon Direct Wafer Bonding Nanoscale Cavities Confined 4He Lambda Transition Uniform Confinement Thermal Oxide Lithographic Patterning RCA Cleaning High-temperature Annealing Thermal And Hydrodynamic Properties

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