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Totalmente electrónico resuelto nanosegundo túnel microscopía: Facilitar la investigación de Dopant solo carga dinámica
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1Department of Physics,University of Alberta, 2National Institute for Nanotechnology,National Research Council of Canada, Edmonton, 3Max Planck Institute for the Structure and Dynamics of Matter, 4Max Planck Institute for Solid State Research, 5Department of Physics and Astronomy,University of Manitoba, 6Joint Attosecond Science Laboratory,University of Ottawa
Chapters
- 00:05Title
- 00:52Initial Setup of Microscope and Experiments
- 02:05Preparation of the H-Si(100)-(2×1) Reconstruction
- 04:20Assessing the Quality of the Pump-probe Pulses at the Tunnel Junction
- 06:32Experiment 1: Time-resolved Scanning Tunneling Spectroscopy
- 07:55Experiment 2: Time-resolved STM Measurements of Relaxation Dynamics
- 08:47Experiment 3: Time-resolved STM Measurements of Excitation Dynamics
- 09:27Results: Investigation of Single Dopant Change Dynamics
- 10:43Conclusion
Tags
Keywords: Nanosecond-resolved Scanning Tunneling MicroscopySingle Dopant Charge DynamicsTime-resolved Scanning Tunneling MicroscopySemiconductor DopantsTunneling CurrentUltra-high VacuumCryogenic TemperaturesArbitrary Function GeneratorRadio Frequency SwitchesSilicon WaferSample PreparationTungsten Filament
