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微波导光衰减法测量半导体中的载波寿命

JoVE Journal
Engineering

This content is Free Access.

JoVE Journal Engineering

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

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微波导光衰减法测量半导体中的载波寿命

DOI:

10.3791/59007-v

•

07:38 min

•

April 18, 2019

•

Takato Asada, Yoshihito Ichikawa, Masashi Kato²

¹Department of Electrical & Mechanical Engineering,Nagoya Institute of Technology, ²Frontier Research Institute for Material Science,Nagoya Institute of Technology

Chapters

00:04Title
00:49Preparation of the Sample and Aqueous Solutions
01:44Preparation of the Measuring Equipment
03:36Measurement and Data Processing
05:47Results: Normalized and Calculated μ-PCD Decay Curves for the n-type 4H-SIC Sample in Air and Aqueous Solutions
06:29Conclusion

Summary

Automatic Translation

作为半导体中重要的物理参数之一, 本文采用微波光导性衰减法的协议对载流子寿命进行了测量。

Tags

Carrier Lifetime Semiconductor Microwave Photoconductivity Decay Micro-PCD 4H Silicon Carbide Aqueous Solution Pulsed Laser Photodiode Oscilloscope Microwave Waveguide Schottky Barrier Diode Gun Diode

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