Waiting
Login processing...

Trial ends in Request Full Access Tell Your Colleague About Jove
Journal / Engineering / Selektiv Area Ændring af Silicon…
JoVE Journal
Engineering

A subscription to JoVE is required to view this content. Sign in or start your free trial.

JoVE Journal Engineering
Selektiv Area Ændring af Silicon overfladebefugtelighed af Pulsed UV laser Bestråling i Liquid Miljø
Cryogenic Liquid Jets for High Repetition Rate Discovery Science
Journal (Engineering)
Cryogenic Liquid Jets for High Repetition Rate Discovery Science
Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material
Journal (Engineering)
Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material
 
Click here for the English version

Selektiv Area Ændring af Silicon overfladebefugtelighed af Pulsed UV laser Bestråling i Liquid Miljø

Article DOI: 10.3791/52720-v • 08:48 min • November 9th, 2015
November 9th, 2015 •
1, 1, 1
1Laboratory for Quantum Semiconductors and Photon-based BioNanotechnology, Interdisciplinary Institute for Technological Innovation, Laboratoire Nanotechnologies Nanosystèmes (LN2)- CNRS UMI-3463, Faculty of Engineering, Université de Sherbrooke

Chapters

Summary
Automatic Translation

Please note that all translations are automatically generated.

Click here for the English version.

Vi rapporterer om en proces med in situ ændring af HF behandlet Si (001) overflade i en hydrofil eller hydrofob tilstand ved at bestråle prøver i mikrofluide kamre fyldt med H 2 O 2 / H 2 O opløsning (0,01% -0,5%) eller methanol-løsninger hjælp pulserende UV-laser af en slægtning lav puls indflydelse.

Tags

Engineering Silicon overfladebefugtelighed laser-overflade interaktion selektiv område behandling excimerlaser røntgen fotoelektronspektroskopi trykvinkel
Read Article

Get cutting-edge science videos from JoVE sent straight to your inbox every month.

Waiting X
Simple Hit Counter