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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
 

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Article DOI: 10.3791/60798-v • 12:32 min • May 24th, 2020
May 24th, 2020 •
*1, *2, *1, *2, *3
1School of Technology and Sciences, São Paulo State University - UNESP, 2Scholl of Electronic Engineering, Bangor University, 3Institute of Geosciences and Exact Sciences, São Paulo State University - UNESP
* These authors contributed equally

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Anodization parameters for growth of the aluminum-oxide dielectric layer of zinc-oxide thin-film transistors (TFTs) are varied to determine the effects on the electrical parameter responses. Analysis of variance (ANOVA) is applied to a Plackett-Burman design of experiments (DOE) to determine the manufacturing conditions that result in optimized device performance.

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Anodization Parameters Aluminum Oxide Dielectric Layer Thin-film Transistors Electrolytic Solution Substrate Glass Slides Cleaning Process RF Plasma Cleaning TFT Construction Aluminium Electrode Anodization Process Zinc Oxide Active Layer Thermal Evaporation Drain Source Electrodes Constant Current Voltage Control Electrical Characterization Dual Channel Source-measuring Unit Transfer Curve Gate Voltage Drain Source Current Electrical Mobility Placket-Burman Design Of Experiments
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