JoVE Journal
Engineering
Engineering
A subscription to JoVE is required to view this content. Sign in or start your free trial.
Chapters
Summary
Uniformly sized nanoparticles can remove fluctuations in contact hole dimensions patterned in poly(methyl methacrylate) (PMMA) photoresist films by electron beam (E-beam) lithography. The process involves electrostatic funneling to center and deposit nanoparticles in contact holes, followed by photoresist reflow and plasma- and wet-etching steps.