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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
 

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Article DOI: 10.3791/56494-v • 08:50 min • November 28th, 2017
November 28th, 2017 •
1,2, 2,3, 1,2, 1,2
1Graduate Institute of Electronics Engineering, National Taiwan University, 2Research Center for Applied Sciences, Academia Sinica, 3Graduate Institute of Photonics and Optoelectronics, National Taiwan University

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résumé
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Through the sulfurization of pre-deposited transition metals, large-area and vertical 2D crystal hetero-structures can be fabricated. The film transferring and device fabrication procedures are also demonstrated in this report.

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Preparation Large-area Vertical 2D Crystal Hetero-structures Sulfurization Transition Metal Films Device Fabrication Growth Technique Control Number Of Layers Simple Technique Layer Number Controllability Practical Applications Transitor Properties C-plane Sapphire Substrate RF Sputtering System Argon Gas Injection Chamber Pressure Plasma Ignition Power Output Metal Deposition
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